Steep Subthreshold Swing in Double Gate NCFET:A Simulation Study

Abstract

The rapid increase in interest on Negative capacitance Field Effect Transistors(NCFETs) is due to its Low power applications. NCFETs stepsup the voltage between the oxide and ferroelectric capacitance due to reversing (i.e, amplification) effect of a ferroelectric (fe) layer[1]. These are designed in a way such that its Subthreshold swing overcomes the boltzmann limit. According to the Boltzmann theorem, carriers that can cross the barrier and increase current by a decade need a gate voltage increase of at least 60 mV[2]. This paper presents a new approach for designing NCFETS, where the target is a low subthreshold swing. The proposed model is validated against several experimental data for an double-gate FET architecture.