Test results of irradiated CMOS pixel circuits in 150 nm CMOS technology for the ATLAS Inner Tracker Upgrade

Z. Chen, M. Barbero, P. Barrillon, C. Bespin, S. Bhat, P. Breugnon, I. Caicedo, Y. Degerli, S. Godiot, T. Hemperek, T. Hirono, F. J. Iguaz, H. Krüger, P. Pangaud, Rozanov Alexandre, P. Rymaszewski, P. Schwemling, M. Vandenbroucke, T. Wang, Wermes Norbert
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引用次数: 3

Abstract

A major upgrade for the ATLAS Inner Tracker at the Large Hadron Collider (LHC) is scheduled in 2026. Depleted CMOS pixel sensors on high resistivity substrates in LFoundry 150 nm technology are an interesting option for this upgrade. Recently two large demonstrators, one based on a hybrid concept called LF-CPIX and the other based on a fully monolithic concept called LF-Monopix have been produced. Both prototypes were characterized in the lab and after irradiation up to 160 MRad under CERN’s 24 GeV Proton Synchrotron beam. In this work, we will describe the behavior under radiation of the two prototypes.
用于ATLAS内部跟踪器升级的150nm CMOS技术辐照CMOS像素电路的测试结果
大型强子对撞机(LHC)的ATLAS内部跟踪器计划在2026年进行一次重大升级。LFoundry 150nm技术的高电阻率衬底上的耗尽CMOS像素传感器是此次升级的一个有趣选择。最近已经生产了两个大型演示程序,一个基于称为LF-CPIX的混合概念,另一个基于称为LF-Monopix的完全单片概念。这两种原型在实验室和在欧洲核子研究中心的24 GeV质子同步加速器光束照射高达160 MRad后进行了表征。在这项工作中,我们将描述这两种原型在辐射下的行为。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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