Electron Traps at Sidewalls of Vertical n+-GaAs/n−-InGaP/p+-GaAs Diodes Detected with Deep-Level Transient Spectroscopy

Abstract

Electron traps are detected from vertical n⁺-GaAs/n⁻-InGaP/p⁺-GaAs diodes with deep-level transient spectroscopy (DLTS). Combining lock-in window (tw) varying DLTS and double-correlation DLTS (DDTLS), we assign the electron traps to surface states at the sidewalls of the diodes. The methodology is introduced in the paper.