N. Testi, R. Berenguer, Xuejun Zhang, Sara Munoz, Yang Xu
{"title":"A 2.4GHz 72dB-variable-gain 100dB-DR 7.8mW 4th-order tunable Q-enhanced LC band-pass filter","authors":"N. Testi, R. Berenguer, Xuejun Zhang, Sara Munoz, Yang Xu","doi":"10.1109/RFIC.2015.7337711","DOIUrl":null,"url":null,"abstract":"This paper presents a 2.4GHz two-stage Q-enhanced 4th-order active band-pass filter with 72dB variable gain and 12MHz 3-dB bandwidth. The center frequency of the filter can be tuned from 2.35GHz to 2.48GHz with a frequency step of 0.4MHz. An RF linearization technique is proposed to enhance the dynamic range (DR) to 100dB, and a robust Q of 400 is achieved for each of the two filter stages allowing RF channel selection. An EM isolation structure is implemented to reduce the mutual coupling between the two inductors to -76dB. This RF BPF is fabricated in 55nm CMOS technology and consumes only 7.8mW.","PeriodicalId":121490,"journal":{"name":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"199 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2015.7337711","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents a 2.4GHz two-stage Q-enhanced 4th-order active band-pass filter with 72dB variable gain and 12MHz 3-dB bandwidth. The center frequency of the filter can be tuned from 2.35GHz to 2.48GHz with a frequency step of 0.4MHz. An RF linearization technique is proposed to enhance the dynamic range (DR) to 100dB, and a robust Q of 400 is achieved for each of the two filter stages allowing RF channel selection. An EM isolation structure is implemented to reduce the mutual coupling between the two inductors to -76dB. This RF BPF is fabricated in 55nm CMOS technology and consumes only 7.8mW.