Physics-based bipolar transistor model for low-temperature circuit simulation

Abstract

A comprehensive bipolar transistor model based on the Gummel-Poon model for low-temperature circuit simulation is presented. Low-temperature physical properties such as doping-dependent dielectric permittivity, temperature-dependent free-carrier mobility and intrinsic carrier density, and deionization of impurity dopants are included in the model. Consequently, the model does not require temperature-fitting parameters as does the Gummel-Poon model. Comparisons of the present model with the Gummel-Poon model, with experimental data, and with PISCES two-dimensional device simulation are included