S.I. InP:Fe Hydride-Vpe for Mushroom Type Lasers

Abstract

Highly resistive s.i. InP:Fe grown with the Hydride-Vapor Phase Epitaxy technique is successfully used for selective embedding of mushroom type laser structures. The iron doped InP reveals resistivities from 10/sup 7/ to 10/sup 9/ Q/spl Omega/cm resulting in good current blocking properties and in the reduction of the parasitic capacity, as well. High frequency response of 13 GHz has been achieved.