44-GHz, 0.5-V compact power detector IC in 65-nm CMOS

Abstract

This paper presents an ultra-wideband and ultra-low-voltage compact power detector IC for microwave and millimeter-wave applications. The power detector circuit includes an nMOSFET differential pair with resistive feedback and a pMOSFET buffer. The power detector IC was designed, fabricated and fully evaluated using Fujitsu 65-nm CMOS technology. The detector IC exhibits an operation frequency from 100 MHz to 44 GHz at an operation voltage of only 0.5 V. In addition, the detector IC exhibits a minimum detectable power of -15 dBm with high linearity.