Peaking PA bias circuit for an APT CMOS Doherty PA

Joonhoi Hur, P. Draxler, Jeong-won Park, Anthony Segoria, V. Aparin
{"title":"Peaking PA bias circuit for an APT CMOS Doherty PA","authors":"Joonhoi Hur, P. Draxler, Jeong-won Park, Anthony Segoria, V. Aparin","doi":"10.1109/RFIC.2017.7969099","DOIUrl":null,"url":null,"abstract":"This paper presents a peaking PA bias circuit for an Average Power Tracking (APT) CMOS Doherty PA, where the common supply voltage changes as the target average power changes. In order to have Doherty efficiency characteristics with APT, the peaking PA must have an adaptive bias circuit that shifts the bias as the supply voltage changes, activating the peaking PA at the correct backoff (6dB) from the Posat for that supply voltage. This bias circuit is demonstrated on a CMOS Doherty PA using standard 0.18um SOI. With the proposed bias circuit, the Doherty PA has specification compliant WCDMA performance (with DPD) up to 29dBm Pout, with 40–50% PAE (from 25–29dBm Pout) as the supply voltages ranges from 1.5V to 4V.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969099","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

This paper presents a peaking PA bias circuit for an Average Power Tracking (APT) CMOS Doherty PA, where the common supply voltage changes as the target average power changes. In order to have Doherty efficiency characteristics with APT, the peaking PA must have an adaptive bias circuit that shifts the bias as the supply voltage changes, activating the peaking PA at the correct backoff (6dB) from the Posat for that supply voltage. This bias circuit is demonstrated on a CMOS Doherty PA using standard 0.18um SOI. With the proposed bias circuit, the Doherty PA has specification compliant WCDMA performance (with DPD) up to 29dBm Pout, with 40–50% PAE (from 25–29dBm Pout) as the supply voltages ranges from 1.5V to 4V.
APT CMOS Doherty PA的峰值PA偏置电路
本文提出了一种用于平均功率跟踪(APT) CMOS Doherty PA的峰值偏置电路,其中共电源电压随目标平均功率的变化而变化。为了使APT具有多尔蒂效率特性,峰值PA必须具有一个自适应偏置电路,该电路可以随着电源电压的变化而移动偏置,从而在电源电压的正确回调(6dB)处激活峰值PA。该偏置电路在使用标准0.18um SOI的CMOS Doherty PA上进行了演示。采用所提出的偏置电路,Doherty PA具有符合WCDMA规格的性能(带DPD),最高可达29dBm Pout,当电源电压范围为1.5V至4V时,PAE(从25-29dBm Pout)为40-50%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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