Analysis of crosstalk delay and area for MWNT and bundled SWNT in global VLSI interconnects

M. Majumder, Nisarg D. Pandya, B. Kaushik, S. Manhas
{"title":"Analysis of crosstalk delay and area for MWNT and bundled SWNT in global VLSI interconnects","authors":"M. Majumder, Nisarg D. Pandya, B. Kaushik, S. Manhas","doi":"10.1109/ISQED.2012.6187508","DOIUrl":null,"url":null,"abstract":"Carbon nanotubes (CNTs) are one of the most promising interconnect material for future deep-submicron and nano scale technology. They are more advantageous than copper or other interconnect materials because of their robustness to electromigration. In this paper, the RLC interconnect models are presented on basis of multi-walled CNT (MWNT) and bundled single-walled CNT (SWNT) by including the concept of CMOS driver. By performing HSPICE simulations, the effect of crosstalk is examined for the both kinds of CNTs. A comparative analysis has been done for crosstalk delay and area for these both kinds of CNTs. From simulation results, it has been observed that numbers of SWNTs in bundle are more than the number of shells in MWNTs for same performance of crosstalk delay. Furthermore, irrespective of the type of CNTs, crosstalk delay is extensively affected by transition time, diameter of CNTs and spacing between two lines (generally referred as aggressor and victim).","PeriodicalId":205874,"journal":{"name":"Thirteenth International Symposium on Quality Electronic Design (ISQED)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thirteenth International Symposium on Quality Electronic Design (ISQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2012.6187508","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

Abstract

Carbon nanotubes (CNTs) are one of the most promising interconnect material for future deep-submicron and nano scale technology. They are more advantageous than copper or other interconnect materials because of their robustness to electromigration. In this paper, the RLC interconnect models are presented on basis of multi-walled CNT (MWNT) and bundled single-walled CNT (SWNT) by including the concept of CMOS driver. By performing HSPICE simulations, the effect of crosstalk is examined for the both kinds of CNTs. A comparative analysis has been done for crosstalk delay and area for these both kinds of CNTs. From simulation results, it has been observed that numbers of SWNTs in bundle are more than the number of shells in MWNTs for same performance of crosstalk delay. Furthermore, irrespective of the type of CNTs, crosstalk delay is extensively affected by transition time, diameter of CNTs and spacing between two lines (generally referred as aggressor and victim).
全球VLSI互连中MWNT和捆绑SWNT串扰延迟和面积分析
碳纳米管是未来深亚微米和纳米级技术中最有前途的互连材料之一。由于它们对电迁移的鲁棒性,它们比铜或其他互连材料更有利。本文提出了基于多壁碳纳米管(MWNT)和捆绑单壁碳纳米管(SWNT)的RLC互连模型,并引入了CMOS驱动器的概念。通过HSPICE模拟,研究了串扰对两种碳纳米管的影响。对比分析了这两种碳纳米管的串扰延迟和面积。从仿真结果可以看出,对于相同的串扰延迟性能,单壁纳米管束中的单壁纳米管数量要多于单壁纳米管中的壳层数量。此外,无论碳纳米管的类型如何,串扰延迟都受到转换时间、碳纳米管直径和两线间距(通常称为攻击者和受害者)的广泛影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信