Numerical Simulation of the Temperature Distribution in SiC Sublimation Growth System

Abstract

Although serious attempts have been developed silicon carbide bulk crystal growth technology to an industrial process during the last years, the quality of crystal remains deficient. One of the major problems is that the thermal field of SiC growth systems is not fully understood. Numerical simulation is considered as an important tool for the investigation of the thermal field distribution inside the growth crucible system involved with SiC bulk growth. We employ the finite-element software package ANSYS to provide additional information on the thermal field distribution. A two-dimensional model has been developed to simulate the axisymmetric growth system consist of a cylindrical susceptor (graphite crucible), a graphite felt insulation, and a copper inductive coil. The modeling field is coupled electromagnetic heating and thermal transfer. The induced magnetic field is used to predict heat generation due to magnetic induction. Conduction, convection and radiation in various components of the system are accounted for the heat transfer ways. The thermal field in SiC sublimation growth system was provided.