Fully self-consistent k · p solver and Monte Carlo simulator for hole inversion layers

Abstract

We develop a fully self-consistent solver for the six-band k middot p Schrodinger and Poisson equations which enables us to compute the potential, charge distribution and subband energy in Si and Ge hole inversion layers for arbitrary substrate orientations, for both bulk and multigate MOSFETs. The results for the valence subband structure are used in a simplex Monte Carlo simulator to evaluate the low-field mobility. The results obtained in the case of bulk Si devices are compared with the universal mobility curves and a very good agreement is found.