{"title":"A low power DRAM refresh control scheme for 3D memory cube","authors":"Ying Wang, Yinhe Han, Huawei Li","doi":"10.1109/CoolChips.2014.6842950","DOIUrl":null,"url":null,"abstract":"We propose a low power refresh control scheme for 3D stacked DRAM memory, which leverages the data-pattern dependence characteristics of the cells' Retention-Time to squeeze the margin of refresh interval. It is a systematic approach that uses our proposed Retention-Time (RT) detection mechanism to capture the bottleneck that contributes to over-frequent refresh operations: “weak” cells with relatively shorter Retention-Time than others. With the help of memory scrubbers and Error Correction Pointer (ECP) table integrated on logic base of 3D memory cube, we can avoid the worst-case operation by locating the true “weak” cells sensitized by application and adapting the refresh rate to the data layout under our loop-based control algorithm. As shown in experiments, the method dramatically saves memory energy and bandwidth consumption.","PeriodicalId":366328,"journal":{"name":"2014 IEEE COOL Chips XVII","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE COOL Chips XVII","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CoolChips.2014.6842950","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We propose a low power refresh control scheme for 3D stacked DRAM memory, which leverages the data-pattern dependence characteristics of the cells' Retention-Time to squeeze the margin of refresh interval. It is a systematic approach that uses our proposed Retention-Time (RT) detection mechanism to capture the bottleneck that contributes to over-frequent refresh operations: “weak” cells with relatively shorter Retention-Time than others. With the help of memory scrubbers and Error Correction Pointer (ECP) table integrated on logic base of 3D memory cube, we can avoid the worst-case operation by locating the true “weak” cells sensitized by application and adapting the refresh rate to the data layout under our loop-based control algorithm. As shown in experiments, the method dramatically saves memory energy and bandwidth consumption.