Tunnel-Injection Laser Based on Type II Broken-Gap p-GaInAsSb/p-InAs Single Heterojunction

Abstract

We present a new physical approach to design of III-V middle-infrared diode lasers which can lead to increasing operating temperature of InAs-based lasers. Main pecularity of proposed method is using interface radiative recombination of spatially-separated carriers in type II broken-gap p-p heterojunctions (HJs). Lattice-machted nondoped and doped GaIn0.17As0.22Sb layers with high quality interface were grown on p-InAs (100). It was established that GaIn0.17As0.22Sb/InAs HJ is type II with broken-gap alignment.