Frequency Scaling and Topology Comparison of Millimeter-wave CMOS VCOs

K. W. Tang, S. Leung, N. Tieu, P. Schvan, S. Voinigescu
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引用次数: 61

Abstract

This paper presents an algorithmic design methodology and frequency scaling technique for CMOS VCOs. It illustrates the almost ideal scaling of a fundamental 10-GHz, 90-nm CMOS Colpitts VCO with -117 dBc/Hz phase noise and 4 dBm output power to 77 GHz. The 77-GHz VCO features linear 8.3% tuning range and a phase noise of -100.3 dBc/Hz at 1 MHz offset. The first complementary cross-coupled VCO operating at 77 GHz is also reported. In addition, a new figure of merit for CMOS VCO based on the one defined in the 2003 ITRS is proposed to adequately account for the VCO output power and efficiency
毫米波CMOS压控振荡器的频率缩放与拓扑比较
本文提出了一种CMOS压控振荡器的算法设计方法和频率标度技术。它展示了一个基本的10 GHz, 90 nm CMOS Colpitts压控振荡器的几乎理想的缩放,相位噪声为-117 dBc/Hz,输出功率为4 dBm至77 GHz。77 ghz VCO具有8.3%的线性调谐范围,在1 MHz偏移时相位噪声为-100.3 dBc/Hz。还报道了第一个工作在77 GHz的互补交叉耦合VCO。此外,在2003年ITRS标准的基础上,提出了一种新的CMOS压控振荡器的性能指标,以充分考虑压控振荡器的输出功率和效率
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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