Monolithic integration of Si MOSFETs and GaAs MESFETs

1985 International Electron Devices Meeting Pub Date : 1986-04-01 DOI:10.1109/EDL.1986.26358

H.K. Choi, G. Turner, B. Tsaur

引用次数: 23

Abstract

Integration of Si MOSFET's and GaAs MESFET's on a monolithic GaAs/Si (MGS) substrate has been demonstrated. The GaAs MESFET's have transconductance of 150 mS/mm for a gate length of 1 µm, and the Si MOSFET's have transconductance of 19 mS/mm for a gate length of 5 µm and an oxide thickness of 800 A. These characteristics are comparable to those for devices fabricated on separate GaAs and Si substrates.

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Si mosfet和GaAs mesfet的单片集成

在单片GaAs/Si (MGS)衬底上集成了Si MOSFET和GaAs MESFET。GaAs MOSFET的跨导率为150 mS/mm，栅极长度为1 μ m, Si MOSFET的跨导率为19 mS/mm，栅极长度为5 μ m，氧化物厚度为800 a。这些特性与在单独的GaAs和Si衬底上制造的器件相当。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1985 International Electron Devices Meeting

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