FeRAM circuit technology for system on a chip

K. Asari, Y. Mitsuyama, T. Onoye, I. Shirakawa, H. Hirano, T. Honda, T. Otsuki, T. Baba, T. Meng
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引用次数: 1

Abstract

The ferroelectric memory (FeRAM) has a great advantage for system on a chip, since FeRAM not only supports non-volatility but also delivers a fast memory access similar to that of DRAM. To enhance the applicability of FeRAM for embedded reconfigurable hardware, three circuit technologies are discussed in this paper. Simulation and measurement data confirmed that both power consumption and memory area can be substantially reduced, making FeRAM the most promising new technology for implementing high-performance, low-power reconfigurable hardware.
FeRAM芯片上系统电路技术
铁电存储器(FeRAM)对于片上系统具有很大的优势,因为FeRAM不仅支持非易失性,而且还提供类似于DRAM的快速存储器访问。为了提高FeRAM对嵌入式可重构硬件的适用性,本文讨论了三种电路技术。仿真和测量数据证实,FeRAM可以大大降低功耗和内存面积,使其成为实现高性能、低功耗可重构硬件的最有前途的新技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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