Temperature dependence of electrical characteristics of Al/p-Si(100) and Ti/p-Si(100) Schottky barrier diodes

Abstract

Current-voltage (I–V) and capacitance-voltage (C-V) characteristics on Al/p-Si (100) and Ti/p-Si (100) Schottky barrier diodes (SD) were carried out in a temperature range of 25–85°C. The zero-bias Schottky barrier height (SBH) and ideality factor n were calculated for both metal-semiconductor (MS) structures by using thermionic emission theory showed a strong dependence on temperature. The metals employed (aluminum and titanium) in the fabrication process were characterized to obtain electrical and physical parameters.