Physics-Based Scalable Modeling of GaAs HBTs

Abstract

While physics-based scalable models are commonplace in the Si industry, there has been little work on applying these techniques to III-V HBTs. The diversification of performance requirements for various handset standards presents an excellent opportunity for GaAs to adopt and even improve upon this modeling methodology. In this work we will present the implementation and application of physics-based scalable models to materials from a GaAs HBT manufacturing line. The application of this methodology has greatly reduced the time, effort, and expense of generating HBT models for multiple material structures using a given technology generation.