Fast and power efficient level shifter using FD SOI MOSFETS and widlar current mirror configuration

Abstract

In this paper, two low voltage level shifters are designed which are fast and power efficient. The level shifters shift the level from subthreshold to above threshold voltage. The level shifters are designed at 65nm process technology. The first level shifter is designed by replacing the bulk MOSFET with the FD SOI MOSFET using HSPICE simulator. The other level shifter is designed by using SOI MOSFET instead of bulk MOSFET and a widlar current mirror. SOI MOSFET is used in order to reduce leakage currents that are induced due to scaling (reduction in leakage current also reduces the power dissipation in the level shifter). Here, the effects of using widlar current mirror over Wilson current mirror has been studied.