Photodetectors

H. Kolanoski, N. Wermes
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Abstract

The chapter covers photodetectors for photons in the optical and near UV range (about 200 nm to 700 nm). Important for particle and astroparticle experiments are photodetectors which detect light generated in scintillation or Cherenkov detectors, for example. The detection of photons always starts with the generation of an electron by photoeffect at a photocathode. The photoelectron can then be either multiplied in a photomultiplier tube by secondary electron emission or the cathode could be the surface of a semiconductor detector; both techniques can also be combined in hybrid photodetectors. A relatively new semiconductor detector is the silicon photomultiplier using an avalanche operation mode to obtain sufficiently large signals. In the last section the different photodetectors are compared and are assigned to typical applications according to their properties.
光电探测器
本章涵盖光学和近紫外范围(约200nm至700nm)光子的光电探测器。对于粒子和天体粒子实验来说,重要的是光电探测器,它可以探测闪烁或切伦科夫探测器中产生的光。光子的探测总是从光电阴极通过光效应产生电子开始。然后,光电子可以通过二次电子发射在光电倍增管中倍增,或者阴极可以是半导体探测器的表面;这两种技术也可以结合在混合光电探测器中。一种相对较新的半导体探测器是硅光电倍增管,它使用雪崩工作模式来获得足够大的信号。在最后一节中,对不同的光电探测器进行了比较,并根据它们的性质分配了典型的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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