Study of Channeling and Self-Sputtering Effects of Ion Implantation - Data and Modeling

Abstract

Channeling effect factor (CEF), self-sputtering effect, and amorphous (a-Si) layer thickness data as a function of ion mass (AMU) were measured and quantified by SIMS measurements, SRIM simulations, and HR-TEM measurements. Least squares fitting algorithm is used to fit measurement data. Good agreements between the modeling fitting curve and the measurement data are demonstrated. CEF is a logarithm function of the ion AMU. Self-sputtering is independent on the ion AMU for constant implant energy and dose. Amorphous (a-Si) layer thickness is a linear function of the ion AMU.