550 V superjunction 3.9 /spl Omega/mm/sup 2/ transistor formed by 25 MeV masked boron implantation

Abstract

For the first time, we present experimental work on superjunction devices, in which the deep p-columns have been formed by a multi-step high-energy implantation. The desired blocking voltage and the Ron /spl times/ A are in the range of 500 V-600 V and about 3.5 - 4.0 /spl Omega/mm/sup 2/, respectively. Deep (32 /spl mu/m) p-n junctions were formed by using a set of five boron implantation energies ranging from 3 to 25 MeV. Masking was achieved by silicon stencil masks which were glued to the device wafers.