Incorporating SIMS Structures in Product Wafers in Order to Perform SIMS and other Material Analysis and Achieve Wafer Level Information about the Front-End Processing

T. Budri, L. Krott, N. Patel, A. Smith, B. Gurcan, K. Crocker, R. Supczak, C. Printy
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Abstract

In this paper, we summarize how the introduction of SIMS structures near the global alignment marks of product wafers serve as an additional way to acquire detailed analytical information about front-end processing and can minimize product yield loss without waiting for metal 1 processing when electrical testing (ET) becomes possible
将SIMS结构整合到产品晶圆中,以执行SIMS和其他材料分析,并获得有关前端加工的晶圆级信息
在本文中,我们总结了在产品晶圆的全局对准标记附近引入SIMS结构如何作为获取有关前端加工的详细分析信息的额外方法,并且可以在电气测试(ET)成为可能时,在不等待金属1加工的情况下最大限度地减少产品产量损失
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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