A 0.32pJ/b 90Gbps PAM4 Optical Receiver Front-End with Automatic Gain Control in 12nm CMOS FinFET

M. Kashani, H. Shakiba, A. Sheikholeslami
{"title":"A 0.32pJ/b 90Gbps PAM4 Optical Receiver Front-End with Automatic Gain Control in 12nm CMOS FinFET","authors":"M. Kashani, H. Shakiba, A. Sheikholeslami","doi":"10.23919/VLSITechnologyandCir57934.2023.10185378","DOIUrl":null,"url":null,"abstract":"This work presents a 0.32pJ/b90Gbps PAM4 optical receiver (RX) front-end with a 13.4pA/$\\sqrt{}$Hz noise density. The proposed design employs a new transimpedance amplifier (TIA) and a single-ended-to-differential (S2D) block providing a large gain-bandwidth product with less power and area overhead compared to the conventional designs. The proposed RX is implemented in 12nm CMOS FinFET process and co-packaged with a commercial photodiode (PD), offering the best power efficiency, input-referred noise, and figure-of-merit (FOM) amongst the previous state-of-the-art designs [1] –[5].","PeriodicalId":317958,"journal":{"name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185378","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This work presents a 0.32pJ/b90Gbps PAM4 optical receiver (RX) front-end with a 13.4pA/$\sqrt{}$Hz noise density. The proposed design employs a new transimpedance amplifier (TIA) and a single-ended-to-differential (S2D) block providing a large gain-bandwidth product with less power and area overhead compared to the conventional designs. The proposed RX is implemented in 12nm CMOS FinFET process and co-packaged with a commercial photodiode (PD), offering the best power efficiency, input-referred noise, and figure-of-merit (FOM) amongst the previous state-of-the-art designs [1] –[5].
基于12nm CMOS FinFET的0.32pJ/b 90Gbps PAM4光接收机前端自动增益控制
这项工作提出了一个0.32pJ/b90Gbps PAM4光接收器(RX)前端,噪声密度为13.4pA/$\sqrt{}$Hz。该设计采用了一种新的跨阻放大器(TIA)和单端差分(S2D)模块,与传统设计相比,可以提供更大的增益带宽产品,功耗和面积开销更小。所提出的RX采用12nm CMOS FinFET工艺实现,并与商用光电二极管(PD)共封装,在先前最先进的设计[1]-[5]中提供最佳的功率效率、输入参考噪声和性能因数(FOM)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信