Study of Thermal Transport Anisotropy in Porous Silicon Systems by Raman Technique

M. Isaiev, O. Didukh, V. Lysenko, A. Belarouci
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Abstract

We have investigated the thermal transport in anisotropic nanostructured materials. Particularly, porous silicon and silicon nanowires arrays have been considered in this work. For thermal conductivity evaluation Raman technique has been applied. The thermal transport anisotropy is more pronounce in silicon nanowires array than in porous silicon. Yet, the in-plane and cross-plane thermal conductivities of porous silicon differ approximately in twice. Both values are in a good agreement with the literature.
用拉曼技术研究多孔硅体系的热输运各向异性
研究了各向异性纳米结构材料的热输运。特别是多孔硅和硅纳米线阵列在这项工作中被考虑。对于导热系数的评估,拉曼技术已被应用。硅纳米线阵列的热输运各向异性比多孔硅更明显。然而,多孔硅的面内和面间导热系数相差约两倍。这两个值与文献很好地吻合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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