The effect of thermal annealing on the properties of polysilicon piezoresistors

Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289) Pub Date : 1999-09-21 DOI:10.1109/MIAME.1999.827838

V. Gridchin, V. Grischenko, A. M. Loganihin, V. M. Lubimsky

引用次数: 0

Abstract

Polycrystalline silicon offers promise as a pressure sensor material, especially for extended temperature range applications. The investigation of the dependencies of polysilicon layers' physical properties on deposition and annealing parameters is the aim of this work.

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热退火对多晶硅压敏电阻性能的影响

多晶硅作为一种压力传感器材料提供了希望，特别是在扩展温度范围的应用中。研究多晶硅层的物理性质对沉积和退火参数的依赖关系是本研究的目的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)

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