Characterization of titanium-vanadium oxides deposited on silicon substrates using in photovoltaic applications

2011 International Students and Young Scientists Workshop "Photonics and Microsystems" Pub Date : 2011-07-08 DOI:10.1109/STYSW.2011.6155857

K. Sieradzka, D. Kaczmarek, J. Domaradzki, E. Prociów, T. Berlicki

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Abstract

The current work is concerned with heterojunctions consist of transparent oxide semiconductors (TOSs) deposited on different silicon (Si) substrates using in photovoltaics. The TOS-Si heterojunctions were fabricated by high energy reactive magnetron sputtering (HE RMS). The sputtering was performed from V metallic foils located on Ti target. As a TOS materials the mixed titanium-vanadium (Ti-V) oxides have been selected. The nanocrystalline titanium-vanadium thin films have high transmission coefficient (ca. 76 % in visible spectral range), resistivity 105 ¿cm at room temperature and n-type electrical conduction. Additionally, the TOS films deposited on Si substrate perform a antireflection function through reduce reflection coefficient of pure Si ones. Based on current to voltage (I-V) measurements of different TOS-Si heterojunctions, the existence of a photoelectric effect under the influence of active area radiation has been found. Therefore, the applicability of mixed titanium-vanadium oxides to various photovoltaics application has been discussed.

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光伏应用中硅基钛钒氧化物的表征

目前的工作是关于异质结由透明氧化物半导体(TOSs)沉积在不同的硅(Si)衬底上，用于光伏电池。采用高能反应磁控溅射(HE RMS)制备了TOS-Si异质结。在钛靶上用V金属箔进行了溅射。选择钛钒混合氧化物作为TOS材料。纳米晶钛钒薄膜具有高透射系数(可见光谱范围约为76%)，室温电阻率105¿cm和n型导电性。此外，沉积在Si衬底上的TOS薄膜通过降低纯Si薄膜的反射系数来实现增透功能。通过对不同TOS-Si异质结的电流电压比(I-V)测量，发现在有源辐射的影响下存在光电效应。因此，本文讨论了混合钛钒氧化物在各种光伏应用中的适用性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2011 International Students and Young Scientists Workshop "Photonics and Microsystems"

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