Design and Drain Current Characteristics of L-Shaped Dielectric TFET with work function Engineering

Abstract

The Tunnel Field Effect Transistor (TFET) is modified internally with a novel L-shaped with two different dielectric materials in 5nm technology using the TCAD tool. The proposed device is made of High k dielectric materials being Hafnium Oxide (Hf02) and low k dielectric materials being Silicon Dioxide (SiO2). Both materials have a good high potential to attract low power and achieve well on current (Ion) with lower leakage current (Ioff). Based on its analysis and simulations using the ATLAS simulator, the suggested device (L-DTFET) exhibits band to band tunnelling (BTBT). Source and drain doping concentration are equal in the Proposed L-DTFET., but channel doping concentration is less. Due to channel doping concentration., the BTBT mechanism is good over the Double Gate TFET and Conventional TFET. The L-shaped DTFET exhibits improved electrical characteristics and are calibrated for all the parameters. The corner effect is suppressed due to pocket doping in the channel of L- shaped dielectric TFET. The key properties of L-DTFETs are scaling the gate length to a 5 nm invention without reducing the on current (Ion) or raising the leakage current. Therefore., the energy efficiency of 5nm L-shaped DTFET justifies low power high-speed applications.