Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime

Abstract

In this work, the impact of quantum modulation of the charge in the subtreshold regime is investigated for various architectures. Using Hänsch's model, the reduction in threshold voltage roll-off induced by quantum effects in a double gate is investigated. Next, it is demonstrated with Poisson-Schrödinger simulations that there is a quantum-induced increase in sub-threshold swing for an InAs channel compared to a Si channel in a long-channel bulk device. Finally, a correction to the Bulk subthreshold swing classical model is proposed and validated on simulations. The results suggest that, contrary to double-gate devices, quantum modulation of the charge has an impact in the subthreshold regime for bulk architectures.