Improvement in lateral IGBT design for 500 V 3 A one chip inverter ICs

Abstract

This paper reports, for the first time, the development of 500 V, 3 A single chip inverter ICs. The chip size of the IC is 7.1/spl times/5.2 mm/sup 2/, which is only 30% larger than that of 500 A, 1 A inverter ICs. The chip size reduction has been realized by 35% improvement in lateral IGBT on-resistance and an optimized layout of LIGBT unit cells and bonding pads.