Deep Trench Resistance and leakage Reduction - Poly1 Doping Process Optimization in High Volume DRAM Manufacturing for 300mm Factory

Abstract

In this paper, we describe the influence of arsenic doped poly-silicon on signal margin and node leakage current of 110 nm deep trench DRAM products. Methods on optimizing both physical and electrical qualities of poly-silicon are presented and challenges of quick electrical characterization of the new process for rapid yield learning are discussed. Finally, how these methods can be applied to other poly layers and to the next generation devices are briefly discussed