Novel dielectric deposition technology for advanced interconnect with air gap

Abstract

A Filament-Assisted Chemical Vapor Deposition (FACVD) concept for back-end-of-line (BEOL) applications is presented. Key capabilities of this technology include low-temperature plasma-free film deposition with straightforward scalability and extendibility. Deposition mechanism and film properties are compared with conventional plasma-enhanced CVD (PECVD). FACVD deposition of a decomposable polymer and a porous low-k organosilicate cap is demonstrated to build air gap structures. Other FACVD applications are also discussed.