Effects of Initial Stress on SiGe Capacitive Pressure Sensor

Abstract

We proposed a design and sacrificial-based fabrication process of capacitive pressure sensor with SiGe as a structural layer and movable electrode. Simulated results showed that its sensitivity was around 15fF/bar in a full-scale span from 30 to 110kPa. The initial stress for the used materials was also discussed in this study. At a low deposition temperature of SiGe (<450°C), it is a promising and ideal candidate for post CMOS fabrication.