M. H. Lee, C. Kuo, C.-H. Tang, H. Chen, C.-Y. Liao, R. Hong, S. Gu, Y.-C. Chou, Z. Wang, Syuan-Ye Chen, P. Chen, M. Liao, K.-S. Li
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引用次数: 1
Abstract
The typical characteristics of ultra-thin Zr doped in HfO2 as gate stack is demonstrated. The 1T memory window of P/E retention is 0.67V for 5nm and 1.52V for 7nm after extrapolated 10 years with VP/E=± 4.8V, and >109 cycles of read endurance. It is promising to use ultra-thin FE-HZO as the guidelines for 1T memory applications.
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