Design of Dopingless Nanowire FET with the Effect of Interface Charges upon Linearity Analysis

Abstract

The pursuit of miniaturization and improved performance in nanoscale electronic devices has spurred the exploration of innovative device architectures. This paper presents a novel design for a dopingless nanowire field-effect transistor (NW-FET) and investigates the influence of interface charges on its linearity characteristics. By eliminating the conventional doping process, the dopingless NW-FET offers enhanced design flexibility and reduced process complexity.The primary aim of this research work is to evaluate the impact of interface charges on the linearity performance of the proposed dopingless NW-FET. Advanced device simulation techniques are employed to conduct a comprehensive numerical analysis. Various types and densities of interface charges, including fixed oxide charges and surface states, are examined. Overall, this research provides valuable insights into the design and optimization of dopingless NW-FETs, elucidating the crucial role of interface charges in determining their linearity performance. The findings presented herein contribute to the advancement of nanoscale device engineering and offer guidance for the development of future electronic devices featuring improved linearity characteristics.