Effect of FA/O II Surfactant as a Complex Non-Ionic Surfactant on Copper CMP

Abstract

The surfactant in the slurry can optimize the surface uniformity and surface topography of the wafer to realize the global planarization, so the effect of FA/O II surfactant as a complex non-ionic surfactant in a glycine-based weakly alkaline slurry during the copper chemical mechanical planarization (CMP) process was discussed. The experimental results verified FA/O II surfactant can achieve a higher material removal rate (MRR) and lower within-wafer non-uniformity (WIWNU) than fatty alcohol polyoxyethylene ether (JFCE). A series of measurements confirmed that FA/O II surfactant can reduce surface tension and improve the uniformity and the topography of polished surfaces. The action mechanism of FA/O II surfactant was also analyzed.