Elastic-Vt CMOS circuits for multiple on-chip power control

M. Mizuno, K. Furuta, S. Narita, H. Abiko, I. Sakai, M. Yamashina
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引用次数: 21

Abstract

The elastic-Vt CMOS (EVTCMOS) circuit design controls MOS transistor source (not substrate) voltages, so fabrication requires no special steps. The post-fabrication threshold voltages can be switched back and forth between high Vt (sleep mode) and low Vt (active mode), and can be also controlled as a means of reducing the sensitivity to device-parameter deviations and operating-environment variations. This results in reduction of switching time between sleep and active modes, and in reduced static power consumption in sleep mode.
弹性vt CMOS电路用于多个片上电源控制
弹性vt CMOS (EVTCMOS)电路设计控制MOS晶体管源(而不是衬底)电压,因此制造不需要特殊步骤。制造后的阈值电压可以在高Vt(休眠模式)和低Vt(活动模式)之间来回切换,也可以作为降低对器件参数偏差和工作环境变化的灵敏度的一种手段进行控制。这样可以减少睡眠模式和活动模式之间的切换时间,并减少睡眠模式下的静态功耗。
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