In-depth description for the FA case with Gate-to-Source or Drain short by nanoprobing analysis

Abstract

Nanoprobing analysis has become standard analytical technique in the modern semiconductor FA lab. In this paper, we describe the use of nanoprobing to investigate cases of Gate-to-Source or Gate-to-Drain shorts and follow up the data generated by nanoprobing with physical analysis. The paper provide discussion of the electrical details and the physical mechanisms.