InGaP/InGaAs dual-channel transistor

Abstract

An interesting InGaP/InGaAs heterostructure field-effect transistor utilizing dual /spl delta/-doped quantum wells as double channels is studied and demonstrated. The employed dual /spl delta/-doped quantum wells and InGaP layer provide good carrier confinement and Schottky behavior, respectively. Good device performances including higher turn-on and breakdown voltages, high and linear transconductance and RF properties are obtained. For a 1 /spl times/ 100 /spl mu/m device, turn-on voltage of 1.74 V, maximum output current of 499 mA/mm, and maximum transconductance of 162 mS/mm with 303 mA/mm broad operation regime are obtained. The microwave properties of f/sub T/ and f/sub max/ are 16 and 32.3 GHz, respectively. Furthermore, even the device is operated at higher temperature regime (>400K), insignificant degradations of DC and RF performances are observed.