BISTs for post-bond test and electrical analysis of high density 3D interconnect defects

I. Jani, D. Lattard, P. Vivet, L. Arnaud, E. Beigné
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引用次数: 6

Abstract

Cu-Cu hybrid bonding offers very high density interconnects (pitch around 2 μm or less) in 3D stacking integrated circuits (HD 3D-IC), but the smaller the Cu pad size, the more the fabrication and bonding defects have an important impact on yield and performance. Defects such as bonding misalignment, micro-voids and contact defects at the copper surface, can affect the electrical characteristics and the life time of 3D-IC considerably. In this paper, we propose two complementary test and characterization structures dedicated to high density 3D-IC interconnects. The first test structure permits to measure the misalignment defect with a great accuracy and the second to measure the RC delay of a periodic signal applied to a daisy chain composed of 3D Cu-Cu interconnects. The measured misalignment values and propagation delays allows to detect Cu-Cu full open, misalignment, and micro-voids, in order to assess performance of high density 3D Integrated Circuit. Both test structures are implemented as BIST engines, which are integrated and controlled with IEEE 1687, for an overall negligible area cost.
bist用于高密度三维互连缺陷的键后测试和电学分析
在3D堆叠集成电路(HD 3D- ic)中,Cu-Cu混合键合提供了非常高密度的互连(间距约为2 μm或更小),但Cu衬垫尺寸越小,制造和键合缺陷越多,对成品率和性能产生重要影响。铜表面的键合错位、微空洞和接触缺陷等缺陷会对3D-IC的电学特性和使用寿命产生很大影响。在本文中,我们提出了两种互补的测试和表征结构,专门用于高密度3D-IC互连。第一个测试结构允许以很高的精度测量不对准缺陷,第二个测试结构用于测量应用于由3D Cu-Cu互连组成的菊花链的周期信号的RC延迟。测量的偏差值和传播延迟允许检测Cu-Cu全开、偏差和微空隙,以评估高密度3D集成电路的性能。这两种测试结构都实现为BIST引擎,并与IEEE 1687集成和控制,总体面积成本可以忽略不计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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