Accurate high frequency noise modeling in SiGe HBTs

Abstract

A new extension to account for correlation between the shot noise sources of SiGe HBTs is formulated. This model is valid to be added to existing compact models. Using this model, circuit level noise parameters, including the minimum noise figure, the optimum generator admittance and the noise resistance, are calculated from noise sources and the small signal y-parameters of the transistor through circuit analysis of the chain noisy two-port representation. The minimum noise figure simulated was found to be less than the original model without correlation ranging from -23% at 2 GHz to -6% at 26 GHz, giving a better fit to measured data.