Structured Design Based on the Inversion Factor Parameter: Case Study of ΔΣ Modulator System

D. Stefanovic, S. Pesenti, M. Pastre, M. Kayal
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引用次数: 3

Abstract

This paper presents the design flow from system-level specifications to transistor-level design for three different fully-differential amplifiers composing the first and the second integrator of a second-order hybrid multi-bit ΔΣ modulator. The circuit-level specifications for each amplifier are extracted using behavioral models and time-domain system-level simulations with a SNDR target value of 93 dB ± 2 dB. The amplifiers are designed using the structured analog design methodology consisting of circuit partitioning into basic analog blocks, specification derivation for each basic block, and transistor sizing in a specific design sequence. Transistor-level design is based on the choice of the inversion factor and the transistor length to achieve the required specifications of each block. After all three analog amplifiers are sized, the system-level performance is confirmed by time-domain simulations, and the obtained SNDR value is within the specified range.
基于反演因子参数的结构化设计——以ΔΣ调制器系统为例
本文介绍了由三种不同的全差分放大器组成的二阶混合多位ΔΣ调制器的第一和第二积分器的设计流程,从系统级规格到晶体管级设计。利用行为模型和时域系统级仿真提取每个放大器的电路级规格,SNDR目标值为93 dB±2 dB。放大器的设计使用结构化模拟设计方法,包括电路划分为基本模拟块,每个基本块的规格推导,以及特定设计顺序的晶体管尺寸。晶体管级设计是根据反转因子和晶体管长度的选择来实现每个模块所需的规格。在对三种模拟放大器进行尺寸测试后,通过时域仿真验证了系统级性能,得到的SNDR值在指定范围内。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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