A CMOS RF front-end with on-chip antenna for V-band broadband wireless communications

Chao-Shiun Wang, Juin-Wei Huang, Shon-Hang Wen, S. Yeh, Chorng-Kuang Wang
{"title":"A CMOS RF front-end with on-chip antenna for V-band broadband wireless communications","authors":"Chao-Shiun Wang, Juin-Wei Huang, Shon-Hang Wen, S. Yeh, Chorng-Kuang Wang","doi":"10.1109/ESSCIRC.2007.4430266","DOIUrl":null,"url":null,"abstract":"This paper presents a V-band receiver front-end for broadband wireless applications. This design consists of an on- chip antenna, a low noise amplifier and a down-conversion mixer with a built-in voltage controlled oscillator as the local oscillator signal. The CPW-fed folded-slot antenna structure was adopted in this work to optimize input impedance matching for the LNA. The measured power gain and input P1dB of the proposed V-band LNA are 18 dB and -17.5 dBm, respectively. The measured isotropic conversion gain at 50 GHz is 23.4 dB. The total V-band RF front-end receiver dissipates 36.6 mW with a 1.2 V supply voltage. The receiver front-end with the on-chip antenna is implemented in a standard 0.13 mum RF CMOS technology without post processing.","PeriodicalId":121828,"journal":{"name":"ESSCIRC 2007 - 33rd European Solid-State Circuits Conference","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2007 - 33rd European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2007.4430266","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17

Abstract

This paper presents a V-band receiver front-end for broadband wireless applications. This design consists of an on- chip antenna, a low noise amplifier and a down-conversion mixer with a built-in voltage controlled oscillator as the local oscillator signal. The CPW-fed folded-slot antenna structure was adopted in this work to optimize input impedance matching for the LNA. The measured power gain and input P1dB of the proposed V-band LNA are 18 dB and -17.5 dBm, respectively. The measured isotropic conversion gain at 50 GHz is 23.4 dB. The total V-band RF front-end receiver dissipates 36.6 mW with a 1.2 V supply voltage. The receiver front-end with the on-chip antenna is implemented in a standard 0.13 mum RF CMOS technology without post processing.
用于v波段宽带无线通信的带有片上天线的CMOS射频前端
本文提出了一种用于宽带无线应用的v波段接收机前端。本设计由片上天线、低噪声放大器和下变频混频器组成,内置压控振荡器作为本振信号。为了优化LNA的输入阻抗匹配,本文采用了cpw馈电折叠槽天线结构。该v波段LNA的实测功率增益和输入P1dB分别为18 dB和-17.5 dBm。在50 GHz时测得的各向同性转换增益为23.4 dB。在1.2 V电源电压下,V波段射频前端接收器的总功耗为36.6 mW。带有片上天线的接收器前端采用标准的0.13 μ m RF CMOS技术,无需后处理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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