{"title":"Design of evanescent semiconductor waveguide optical isolators","authors":"H. Shimizu, T. Mori, S. Goto","doi":"10.1109/NUSOD.2009.5297235","DOIUrl":null,"url":null,"abstract":"We have designed evanescent waveguide semiconductor optical isolators to realize 8.7dB/mm-isolation and lower forward transparent current. They are composed of an upper InGaAsP waveguide layer with Fe layer at their sidewall upon the active layer.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2009.5297235","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We have designed evanescent waveguide semiconductor optical isolators to realize 8.7dB/mm-isolation and lower forward transparent current. They are composed of an upper InGaAsP waveguide layer with Fe layer at their sidewall upon the active layer.