Design of evanescent semiconductor waveguide optical isolators

H. Shimizu, T. Mori, S. Goto
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引用次数: 1

Abstract

We have designed evanescent waveguide semiconductor optical isolators to realize 8.7dB/mm-isolation and lower forward transparent current. They are composed of an upper InGaAsP waveguide layer with Fe layer at their sidewall upon the active layer.
倏逝半导体波导光隔离器的设计
我们设计了倏逝波导半导体光隔离器,实现了8.7dB/mm的隔离和较低的正向透明电流。它们由上InGaAsP波导层和在有源层上的侧壁处的铁层组成。
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