Approximating infinite dynamic behavior for DRAM cell defects

Z. Al-Ars, A. V. Goor
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引用次数: 36

Abstract

Analyzing the dynamic faulty behavior in DRAMs is a severely time consuming task, because of the exponential growth of the analysis time needed with each memory operation added to the sensitizing operation sequence of the fault. In this paper, a new fault analysis approach for DRAM cell defects is presented where the total infinite space of dynamic faulty behavior can be approximated within a limited amount of analysis time. The paper also presents the analysis results for some cell defects using the new approach, in combination with detection conditions that guarantee the detection of any detectable dynamic faults in the defective cell.
近似无限动态行为的DRAM单元缺陷
分析dram中的动态故障行为是一项非常耗时的任务,因为随着故障敏化操作序列的增加,分析所需的时间呈指数增长。本文提出了一种新的DRAM单元缺陷故障分析方法,该方法可以在有限的分析时间内逼近动态故障行为的总无限空间。文中还给出了用新方法对某些单元缺陷的分析结果,并结合检测条件保证了缺陷单元中任何可检测的动态故障的检测。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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