Fabrication, characterization, and modeling of memristor devices

Abstract

This paper describes the fabrication of memristor devices based on titanium and hafnium oxides. The device cross sectional area is varied to observe the impact this has on the current-voltage characteristic. A modeling technique is then utilized that is capable of matching the current-voltage characteristics of memristor devices. The model was able to match the titanium oxide device described in this paper with 13.58% error. The device model was then used in a neuromorphic simulation showing that a circuit based on this device is capable of learning logic functions.