A numerical analysis for heterojunction phototransistor

Abstract

A punch-through type AlGaAs-GaAs heterojunction phototransistor with a guarding modulation electrode is analyzed by a numerical procedure. The augmented drift-diffusion model is regarded as a suitable model to describe the device, and the coupled equations are solved by the successive line overrelaxation method. The distribution of carriers and electric potential, transportation of non-equilibrium carriers and frequency characteristics are computed systematically. Preliminary results are presented and discussed briefly.