Photoemission properties of LaB6 thin films for the use in PIDs

C. M. Zimmer, K. Yoganathan, F. J. Giebel, D. Lutzenkirchen-Hecht, P. Glosekotter, K. Kallis
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引用次数: 5

Abstract

For the improvement of a commercially available photo ionization detector (PID) with respect to its gas selectivity and sensitivity, a thin emitter film (≈ 20nm) of lanthanum hexaboride (LaB6) was integrated performing the gas detection by photo emitted electrons. To confirm the chosen emitter material's suitability as a photocathode, analyses were performed by X-ray diffraction (XRD) and ultraviolet photoelectron spectroscopy (UPS). Hereby, thin LaB6 films sputtered with higher argon flow rate and sputtering power produced a (100)-oriented film texture yielding work functions in the range of 3.42 to 4.05 eV, accordingly. Photoemission measurements were also realized, whereby quantum efficiency (QE) of thin LaB6 films is still too low compared to laser driven photocathodes when excited by 4.5 eV photons.
用于pid的LaB6薄膜的光电发射特性
为了改进市产光电离检测器(PID)的气体选择性和灵敏度,集成了六硼化镧(LaB6)薄膜(≈20nm),通过光发射电子进行气体检测。为了证实所选择的发射材料作为光电阴极的适用性,进行了x射线衍射(XRD)和紫外光电子能谱(UPS)分析。因此,在较高的氩气流速和溅射功率下溅射的LaB6薄膜产生了(100)取向的薄膜织构,其功函数在3.42 ~ 4.05 eV范围内。此外,还实现了光电发射测量,在4.5 eV光子激发下,LaB6薄膜的量子效率(QE)与激光驱动的光电阴极相比仍然太低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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