Magnetic barrier structures for superconductingmagnetic hybrid Josephson junctions

B. Baek, S. Benz, W. Rippard, S. Russek, P. Dresselhaus, M. Pufall, H. Rogalla
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引用次数: 6

Abstract

If Josephson and spintronic technologies can be successfully integrated to produce a cryogenic memory that can be controlled with single-flux quantum pulses, then they may enable ultra-low-power, high-speed computing. We have developed hybrid Josephson junctions with Nb electrodes, using barrier materials composed of both pseudo-spin valves (PSV) and magnetic-clusters. Our choice of relatively weak ferromagnetic materials such as Ni, PdFe, and NiFeNb enabled us to grow individual layers beyond a few monolayers such that the junctions made with these materials exhibit Josephson coupling as well as magnetic switching behavior. The differences in switching field of each layer were determined by magnetization measurements at 10 K. We fabricated junctions with a wide range of areas (1 μm2 to 100 μm2) by high-throughput, conventional fabrication techniques. In PSV-barrier junctions, the critical current is strongly modulated by the magnetic state in the barrier, including magnetic hysteresis. In junctions with Mn-doped Si barriers, the Josephson coupling was tuned by the density of the Mn magnetic-clusters. Such devices may offer an energy-efficient way to control Josephson junction properties by changing their collective states.
超导磁杂化约瑟夫森结的磁势垒结构
如果约瑟夫森和自旋电子技术能够成功地集成在一起,生产出一种可以用单通量量子脉冲控制的低温存储器,那么它们就可能实现超低功耗、高速计算。我们利用由伪自旋阀(PSV)和磁团簇组成的势垒材料,开发了带有Nb电极的混合约瑟夫森结。我们选择了相对较弱的铁磁性材料,如Ni, PdFe和NiFeNb,使我们能够在几个单层之外生长单个层,这样用这些材料制成的结就能表现出约瑟夫森耦合和磁开关行为。通过在10 K下的磁化测量,确定了各层开关场的差异。我们用高通量的传统制造技术制造了大范围(1 μm2到100 μm2)的结。在psv -势垒结中,临界电流受到势垒中的磁态(包括磁滞)的强烈调制。在Mn掺杂Si势垒的结中,通过Mn磁团簇的密度来调节Josephson耦合。这种装置可以提供一种通过改变其集体状态来控制约瑟夫森结特性的节能方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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