High speed polysilicon deposition process for dielectric isolation technology

Abstract

ABS" This paper describes a newly developed high speed polysilicon deposition process in which molten silicon is sprayed on a substrate and solidified. By utilizing this process, a 500pn thick plysilicon layer which acts as a mechanical support of dielectrically isolated substrate was deposited in only a few minutes. Filling of the polysilicon in V-grooves, curvature of substrates, and dislocations induced in substrates are discussed. The characteristics of a high voltage LSI fabricated using this process is also described.